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IPI028N08N3GHKSA1

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IR (Infineon Technologies) IPI028N08N3GHKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPI028N08N3GHKSA1
Description
MOSFET N-CH 80V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI028N08N3GHKSA1 PDF
In Stock
546
IPI028N08N3GHKSA1 Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14200 pF @ 40 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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