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SIA850DJ-T1-GE3

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Vishay / Siliconix SIA850DJ-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIA850DJ-T1-GE3
Description
MOSFET N-CH 190V 950MA PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIA850DJ-T1-GE3 PDF
In Stock
562
SIA850DJ-T1-GE3 Tech Specifications
SeriesLITTLE FOOT®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)190 V
Current - Continuous Drain (Id) @ 25°C950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 100 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.9W (Ta), 7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Dual
Package / CasePowerPAK® SC-70-6 Dual
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