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SI5463EDC-T1-GE3

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Vishay / Siliconix SI5463EDC-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI5463EDC-T1-GE3
Description
MOSFET P-CH 20V 3.8A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI5463EDC-T1-GE3 PDF
In Stock
274
SI5463EDC-T1-GE3 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead
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Request Quote Now

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