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FDN5618P_G

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Sanyo Semiconductor/ON Semiconductor FDN5618P_G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDN5618P_G
Description
MOSFET P-CH 60V 1.25A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDN5618P_G PDF
In Stock
645
FDN5618P_G Tech Specifications
SeriesPowerTrench®
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 30 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3
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Request Quote Now

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