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2N7635-GA

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GeneSiC Semiconductor 2N7635-GA

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
2N7635-GA
Description
TRANS SJT 650V 4A TO257
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
2N7635-GA PDF
In Stock
848
2N7635-GA Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs415mOhm @ 4A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds324 pF @ 35 V
FET Feature-
Power Dissipation (Max)47W (Tc)
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-257
Package / CaseTO-257-3
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Request Quote Now

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