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FQI8P10TU

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Sanyo Semiconductor/ON Semiconductor FQI8P10TU

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQI8P10TU
Description
MOSFET P-CH 100V 8A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQI8P10TU PDF
In Stock
268
FQI8P10TU Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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