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FQA6N90_F109

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Sanyo Semiconductor/ON Semiconductor FQA6N90_F109

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQA6N90_F109
Description
MOSFET N-CH 900V 6.4A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQA6N90_F109 PDF
In Stock
387
FQA6N90_F109 Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1880 pF @ 25 V
FET Feature-
Power Dissipation (Max)198W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3
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