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IRLW630ATM

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Sanyo Semiconductor/ON Semiconductor IRLW630ATM

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
IRLW630ATM
Description
MOSFET N-CH 200V 9A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IRLW630ATM PDF
In Stock
628
IRLW630ATM Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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