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IPI057N08N3 G

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IR (Infineon Technologies) IPI057N08N3 G

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPI057N08N3 G
Description
MOSFET N-CH 80V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPI057N08N3 G PDF
In Stock
243
IPI057N08N3 G Tech Specifications
SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4750 pF @ 40 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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