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FQP19N20C_F080

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Sanyo Semiconductor/ON Semiconductor FQP19N20C_F080

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQP19N20C_F080
Description
MOSFET N-CH 200V 19A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQP19N20C_F080 PDF
In Stock
554
FQP19N20C_F080 Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 25 V
FET Feature-
Power Dissipation (Max)139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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Request Quote Now

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