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SIR892DP-T1-GE3

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Vishay / Siliconix SIR892DP-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIR892DP-T1-GE3
Description
MOSFET N-CH 25V 50A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIR892DP-T1-GE3 PDF
In Stock
848
SIR892DP-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2645 pF @ 10 V
FET Feature-
Power Dissipation (Max)5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
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