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IPB097N08N3 G

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IR (Infineon Technologies) IPB097N08N3 G

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB097N08N3 G
Description
MOSFET N-CH 80V 70A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB097N08N3 G PDF
In Stock
889
IPB097N08N3 G Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs9.7mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410 pF @ 40 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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