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2SJ681(Q)

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Toshiba Electronic Devices and Storage Corporation 2SJ681(Q)

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
2SJ681(Q)
Description
MOSFET P-CH 60V 5A PW-MOLD2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
2SJ681(Q) PDF
In Stock
804
2SJ681(Q) Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs170mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePW-MOLD2
Package / CaseTO-251-3 Stub Leads, IPak
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Request Quote Now

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