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NP33N06YDG-E1-AY

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Renesas Electronics America NP33N06YDG-E1-AY

Manufacturer :
Renesas Electronics America
Mfr. Part # :
NP33N06YDG-E1-AY
Description
MOSFET N-CH 60V 33A 8HSON
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NP33N06YDG-E1-AY PDF
NP33N06YDG-E1-AY Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta), 97W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package / Case8-SMD, Flat Lead Exposed Pad
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Request Quote Now

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