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NSVBC123JPDXV6T1G

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Rochester Electronics NSVBC123JPDXV6T1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NSVBC123JPDXV6T1G
Description
COMPLEMENTARY BIPOLAR DIGITAL TR
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NSVBC123JPDXV6T1G PDF
In Stock
4000
NSVBC123JPDXV6T1G Tech Specifications
SeriesAutomotive, AEC-Q101
PackageBulk
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
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