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MUN5312DW1T1G

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Sanyo Semiconductor/ON Semiconductor MUN5312DW1T1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
MUN5312DW1T1G
Description
TRANS PREBIAS NPN/PNP SOT363
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MUN5312DW1T1G PDF
MUN5312DW1T1G Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
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