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IMD10AMT1G

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Sanyo Semiconductor/ON Semiconductor IMD10AMT1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
IMD10AMT1G
Description
TRANS NPN/PNP PREBIAS SC74R
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IMD10AMT1G PDF
IMD10AMT1G Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)13kOhms, 130Ohms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V / 68 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max285mW
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSC-74R
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