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NSVBC114EDXV6T1G

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Sanyo Semiconductor/ON Semiconductor NSVBC114EDXV6T1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NSVBC114EDXV6T1G
Description
TRANS 2NPN BIAS BIPOLAR SOT563
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NSVBC114EDXV6T1G PDF
NSVBC114EDXV6T1G Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
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