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RN4909,LF(CT

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Toshiba Electronic Devices and Storage Corporation RN4909,LF(CT

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN4909,LF(CT
Description
PNP + NPN BRT Q1BSR22KOHM Q1BER4
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN4909,LF(CT PDF
In Stock
6000
RN4909,LF(CT Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200MHz, 250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
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