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EMF18XV6T5G

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Rochester Electronics EMF18XV6T5G

Manufacturer :
Rochester Electronics
Mfr. Part # :
EMF18XV6T5G
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
EMF18XV6T5G PDF
In Stock
272000
EMF18XV6T5G Tech Specifications
Series-
PackageBulk
Part StatusActive
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V, 60V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition140MHz
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
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