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FGP10N60UNDF

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Sanyo Semiconductor/ON Semiconductor FGP10N60UNDF

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FGP10N60UNDF
Description
IGBT NPT 600V 20A TO220-3
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FGP10N60UNDF PDF
FGP10N60UNDF Tech Specifications
Series-
PackageTube
Part StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)30 A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 10A
Power - Max139 W
Switching Energy150µJ (on), 50µJ (off)
Input TypeStandard
Gate Charge37 nC
Td (on/off) @ 25°C8ns/52.2ns
Test Condition400V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)37.7 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
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