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HGTP10N120BN

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Sanyo Semiconductor/ON Semiconductor HGTP10N120BN

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
HGTP10N120BN
Description
IGBT 1200V 35A 298W TO220AB
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HGTP10N120BN PDF
HGTP10N120BN Tech Specifications
Series-
PackageTube
Part StatusNot For New Designs
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298 W
Switching Energy320µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100 nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
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