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NGTB50N65FL2WG

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Rochester Electronics NGTB50N65FL2WG

Manufacturer :
Rochester Electronics
Mfr. Part # :
NGTB50N65FL2WG
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NGTB50N65FL2WG PDF
In Stock
1206
NGTB50N65FL2WG Tech Specifications
Series-
PackageBulk
Part StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)200 A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A
Power - Max417 W
Switching Energy1.5mJ (on), 460µJ (off)
Input TypeStandard
Gate Charge220 nC
Td (on/off) @ 25°C100ns/237ns
Test Condition400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)94 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
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Request Quote Now

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