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FGD3N60UNDF

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Sanyo Semiconductor/ON Semiconductor FGD3N60UNDF

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FGD3N60UNDF
Description
IGBT 600V 6A 60W DPAK
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FGD3N60UNDF PDF
FGD3N60UNDF Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)6 A
Current - Collector Pulsed (Icm)9 A
Vce(on) (Max) @ Vge, Ic2.52V @ 15V, 3A
Power - Max60 W
Switching Energy52µJ (on), 30µJ (off)
Input TypeStandard
Gate Charge1.6 nC
Td (on/off) @ 25°C5.5ns/22ns
Test Condition400V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)21 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)
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