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GT30J121(Q)

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Toshiba Electronic Devices and Storage Corporation GT30J121(Q)

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
GT30J121(Q)
Description
IGBT 600V 30A 170W TO3PN
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
GT30J121(Q) PDF
GT30J121(Q) Tech Specifications
Series*
PackageTube
Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
Power - Max170 W
Switching Energy1mJ (on), 800µJ (off)
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)
Request Quote Now
Request Quote Now

We can supply GT30J121(Q), use the request quote form to request GT30J121(Q) pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GT30J121(Q). The price and lead time for GT30J121(Q) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GT30J121(Q). We look forward to working with you to establish long-term relations of cooperation.

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