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HGTD1N120BNS9A

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Sanyo Semiconductor/ON Semiconductor HGTD1N120BNS9A

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
HGTD1N120BNS9A
Description
IGBT 1200V 5.3A 60W TO252AA
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HGTD1N120BNS9A PDF
In Stock
7588
HGTD1N120BNS9A Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)5.3 A
Current - Collector Pulsed (Icm)6 A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 1A
Power - Max60 W
Switching Energy70µJ (on), 90µJ (off)
Input TypeStandard
Gate Charge14 nC
Td (on/off) @ 25°C15ns/67ns
Test Condition960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
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