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HGTP5N120BND

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Sanyo Semiconductor/ON Semiconductor HGTP5N120BND

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
HGTP5N120BND
Description
IGBT 1200V 21A 167W TO220AB
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HGTP5N120BND PDF
HGTP5N120BND Tech Specifications
Series-
PackageTube
Part StatusNot For New Designs
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)21 A
Current - Collector Pulsed (Icm)40 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 5A
Power - Max167 W
Switching Energy450µJ (on), 390µJ (off)
Input TypeStandard
Gate Charge53 nC
Td (on/off) @ 25°C22ns/160ns
Test Condition960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr)65 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
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Request Quote Now

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