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BSM300D12P2E001

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ROHM Semiconductor BSM300D12P2E001

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
BSM300D12P2E001
Description
MOSFET 2N-CH 1200V 300A
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSM300D12P2E001 PDF
In Stock
393
BSM300D12P2E001 Tech Specifications
Series-
PackageTray
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds35000pF @ 10V
Power - Max1875W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
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