| Series | - | |
| Package | Tube | |
| Part Status | Active | |
| FET Type | 6 N-Channel (3-Phase Bridge) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 251A (Tc) | |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 120A, 20V | |
| Vgs(th) (Max) @ Id | 2.8V @ 3mA | |
| Gate Charge (Qg) (Max) @ Vgs | 696nC @ 20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9060pF @ 1000V | |
| Power - Max | 1.042kW (Tc) | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | SP6-P |
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