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BSG0810NDIATMA1

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IR (Infineon Technologies) BSG0810NDIATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSG0810NDIATMA1
Description
MOSFET 2N-CH 25V 19A/39A 8TISON
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSG0810NDIATMA1 PDF
In Stock
617
BSG0810NDIATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A, 39A
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 12V
Power - Max2.5W
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8
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