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SI6562CDQ-T1-GE3

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Vishay / Siliconix SI6562CDQ-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI6562CDQ-T1-GE3
Description
MOSFET N/P-CH 20V 6.7A 8-TSSOP
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI6562CDQ-T1-GE3 PDF
SI6562CDQ-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.7A, 6.1A
Rds On (Max) @ Id, Vgs22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 10V
Power - Max1.6W, 1.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP
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