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SI4816BDY-T1-GE3

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Vishay / Siliconix SI4816BDY-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI4816BDY-T1-GE3
Description
MOSFET 2N-CH 30V 5.8A 8-SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI4816BDY-T1-GE3 PDF
SI4816BDY-T1-GE3 Tech Specifications
SeriesLITTLE FOOT®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.8A, 8.2A
Rds On (Max) @ Id, Vgs18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W, 1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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