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NVMFD5485NLT1G

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Rochester Electronics NVMFD5485NLT1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVMFD5485NLT1G
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVMFD5485NLT1G PDF
NVMFD5485NLT1G Tech Specifications
Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.3A
Rds On (Max) @ Id, Vgs44mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 25V
Power - Max2.9W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
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