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IPG20N06S2L50ATMA1

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IR (Infineon Technologies) IPG20N06S2L50ATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPG20N06S2L50ATMA1
Description
MOSFET 2N-CH 55V 20A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPG20N06S2L50ATMA1 PDF
IPG20N06S2L50ATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 25V
Power - Max51W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4
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