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SI7956DP-T1-GE3

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Vishay / Siliconix SI7956DP-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI7956DP-T1-GE3
Description
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI7956DP-T1-GE3 PDF
SI7956DP-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.6A
Rds On (Max) @ Id, Vgs105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual
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