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BSC0911NDATMA1

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IR (Infineon Technologies) BSC0911NDATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSC0911NDATMA1
Description
MOSFET 2N-CH 25V 18A/30A TISON8
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSC0911NDATMA1 PDF
BSC0911NDATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C18A, 30A
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 12V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8
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