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SI1965DH-T1-GE3

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Vishay / Siliconix SI1965DH-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI1965DH-T1-GE3
Description
MOSFET 2P-CH 12V 1.3A SC70-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI1965DH-T1-GE3 PDF
SI1965DH-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 6V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)
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