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SI3900DV-T1-E3

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Vishay / Siliconix SI3900DV-T1-E3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI3900DV-T1-E3
Description
MOSFET 2N-CH 20V 2A 6-TSOP
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI3900DV-T1-E3 PDF
SI3900DV-T1-E3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A
Rds On (Max) @ Id, Vgs125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
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Request Quote Now

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