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MJ11012G

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Sanyo Semiconductor/ON Semiconductor MJ11012G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
MJ11012G
Description
TRANS NPN DARL 60V 30A TO204
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MJ11012G PDF
MJ11012G Tech Specifications
Series-
PackageTray
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Power - Max200 W
Frequency - Transition4MHz
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204 (TO-3)
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