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MJD112-1G

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Rochester Electronics MJD112-1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
MJD112-1G
Description
POWER BIPOLAR TRANSISTOR, 2A, 10
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MJD112-1G PDF
In Stock
1238585
MJD112-1G Tech Specifications
Series-
PackageBulk
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75 W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
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Request Quote Now

We can supply MJD112-1G, use the request quote form to request MJD112-1G pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MJD112-1G. The price and lead time for MJD112-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MJD112-1G. We look forward to working with you to establish long-term relations of cooperation.

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