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2N5550/D26Z

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Rochester Electronics 2N5550/D26Z

Manufacturer :
Rochester Electronics
Mfr. Part # :
2N5550/D26Z
Description
NPN EPITAXIAL SILICON TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
2N5550/D26Z PDF
In Stock
24000
2N5550/D26Z Tech Specifications
Series-
PackageBulk
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)140 V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Power - Max625 mW
Frequency - Transition300MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
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Request Quote Now

We can supply 2N5550/D26Z, use the request quote form to request 2N5550/D26Z pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N5550/D26Z. The price and lead time for 2N5550/D26Z depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2N5550/D26Z. We look forward to working with you to establish long-term relations of cooperation.

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