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MJD253-1G

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Sanyo Semiconductor/ON Semiconductor MJD253-1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
MJD253-1G
Description
TRANS PNP 100V 4A IPAK
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MJD253-1G PDF
In Stock
816
MJD253-1G Tech Specifications
Series-
PackageTube
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Power - Max1.4 W
Frequency - Transition40MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK
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Request Quote Now

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