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NJVNJD35N04G

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Sanyo Semiconductor/ON Semiconductor NJVNJD35N04G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NJVNJD35N04G
Description
TRANS NPN DARL 350V 4A DPAK-4
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NJVNJD35N04G PDF
In Stock
679
NJVNJD35N04G Tech Specifications
Series-
PackageTube
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 20mA, 2A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Power - Max45 W
Frequency - Transition90MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
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