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MJD117T4G

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Rochester Electronics MJD117T4G

Manufacturer :
Rochester Electronics
Mfr. Part # :
MJD117T4G
Description
POWER BIPOLAR TRANSISTOR, 2A, 10
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MJD117T4G PDF
In Stock
182
MJD117T4G Tech Specifications
Series-
PackageBulk
Part StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75 W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
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