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MJD122-1G

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Sanyo Semiconductor/ON Semiconductor MJD122-1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
MJD122-1G
Description
TRANS NPN DARL 100V 8A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
MJD122-1G PDF
In Stock
235
MJD122-1G Tech Specifications
Series-
PackageTube
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Power - Max1.75 W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
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Request Quote Now

We can supply MJD122-1G, use the request quote form to request MJD122-1G pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MJD122-1G. The price and lead time for MJD122-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MJD122-1G. We look forward to working with you to establish long-term relations of cooperation.

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