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RN2109,LF(CT

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Toshiba Electronic Devices and Storage Corporation RN2109,LF(CT

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN2109,LF(CT
Description
TRANS PREBIAS PNP 50V 0.1A SSM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN2109,LF(CT PDF
RN2109,LF(CT Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200 MHz
Power - Max100 mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM
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