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RN1110MFV,L3F

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Toshiba Electronic Devices and Storage Corporation RN1110MFV,L3F

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN1110MFV,L3F
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN1110MFV,L3F PDF
In Stock
592
RN1110MFV,L3F Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
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