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NSVDTA114EET1G

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Rochester Electronics NSVDTA114EET1G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NSVDTA114EET1G
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NSVDTA114EET1G PDF
In Stock
21000
NSVDTA114EET1G Tech Specifications
Series-
PackageBulk
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75, SOT-416
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Request Quote Now

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