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RN2102MFV,L3F(CT

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Toshiba Electronic Devices and Storage Corporation RN2102MFV,L3F(CT

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN2102MFV,L3F(CT
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN2102MFV,L3F(CT PDF
RN2102MFV,L3F(CT Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250 MHz
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
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We can supply RN2102MFV,L3F(CT, use the request quote form to request RN2102MFV,L3F(CT pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2102MFV,L3F(CT. The price and lead time for RN2102MFV,L3F(CT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2102MFV,L3F(CT. We look forward to working with you to establish long-term relations of cooperation.

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