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RN1119MFV,L3F

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Toshiba Electronic Devices and Storage Corporation RN1119MFV,L3F

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
RN1119MFV,L3F
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
RN1119MFV,L3F PDF
In Stock
289
RN1119MFV,L3F Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
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We can supply RN1119MFV,L3F, use the request quote form to request RN1119MFV,L3F pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1119MFV,L3F. The price and lead time for RN1119MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1119MFV,L3F. We look forward to working with you to establish long-term relations of cooperation.

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